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ISL9V2540S3S N-Channel Ignition IGBT
June 2005
ISL9V2540S3S EcoSPARKTM N-Channel Ignition IGBT
250mJ, 400V Features
! SCIS Energy = 250mJ at TJ = 25 C ! Logic Level Gate Drive
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General Description
The ISL9V2540S3S is a next generation ignition IGBT that offers outstanding SCIS capability in the industry standard D-Pak (TO-263) plastic package. This device is intended for use in automotive ignition circuits, specifically as a coil driver. Internal diodes provide voltage clamping without the need for external components. EcoSPARKTM devices can be custom made to specific clamp voltages. Contact your nearest Fairchild sales office for more information.
Applications
! Automotive Ignition Coil Driver Circuits ! Coil - On Plug Applications
Package
Symbol
COLLECTOR
GATE GATE EMITTER COLLECTOR (FLANGE)
R1
R2
JEDEC TO-263AB D2-Pak
EMITTER
(c)2005 Fairchild Semiconductor Corporation ISL9V2540S3S Rev. A
www.fairchildsemi.com
ISL9V2540S3S N-Channel Ignition IGBT
Device Maximum Ratings TA = 25C unless otherwise noted
Symbol BVCER BVECS ESCIS25 ESCIS150 IC25 IC110 VGEM PD TJ TSTG TL Tpkg ESD Parameter Collector to Emitter Breakdown Voltage (IC = 1 mA) Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA) At Starting TJ = 25C, ISCIS = 12.9A, L = 3.0mHy At Starting TJ = 150C, ISCIS = 10A, L = 3.0mHy Collector Current Continuous, At TC = 25C, See Fig 9 Collector Current Continuous, At TC = 110C, See Fig 9 Gate to Emitter Voltage Continuous Power Dissipation Total TC = 25C Power Dissipation Derating TC > 25C Operating Junction Temperature Range Storage Junction Temperature Range Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s) Max Lead Temp for Soldering (Package Body for 10s) Electrostatic Discharge Voltage at 100pF, 1500 (HBM) Ratings 430 24 250 150 15.5 15.3 10 166.7 1.11 -40 to 175 -40 to 175 300 260 4 Units V V mJ mJ A A V W W/C C C C C kV
Package Marking and Ordering Information
Device Marking V2540S V2540S Device ISL9V2540S3ST ISL9V2540S3S Package TO-263AB TO-263AB Reel Size 330mm Tube Tape Width 24mm N/A Quantity 800 units 50 units
Electrical Characteristics TA = 25C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off State Characteristics
BVCER Collector to Emitter Breakdown Voltage IC = 2mA, VGE = 0, RG = 1K, See Fig. 15 TJ = -40 to 150C IC = 10mA, VGE = 0, RG = 0, See Fig. 15 TJ = -40 to 150C IC = -75mA, VGE = 0V, TC = 25C IGES = 2mA VCER = 250V, RG = 1K, See Fig. 11 TC = 25C TC = 150C 370 400 430 V
BVCES
Collector to Emitter Breakdown Voltage
390
420
450
V
BVECS BVGES ICER
Emitter to Collector Breakdown Voltage Gate to Emitter Breakdown Voltage Collector to Emitter Leakage Current
30 12 10K
14 70 -
25 1 1 40 26K
V V A mA mA mA
IECS R1 R2
Emitter to Collector Leakage Current Series Gate Resistance Gate to Emitter Resistance
VEC = 24V, See TC = 25C Fig. 11 TC = 150C
On State Characteristics
VCE(SAT) VCE(SAT) Collector to Emitter Saturation Voltage Collector to Emitter Saturation Voltage IC = 6A, VGE = 4V IC = 10A, VGE = 4.5V TC = 25C, See Fig. 3 TC = 150C See Fig. 4 1.37 1.77 1.8 2.2 V V
(c)2005 Fairchild Semiconductor Corporation ISL9V2540S3S Rev A.
www.fairchildsemi.com
ISL9V2540S3S N-Channel Ignition IGBT
Dynamic Characteristics
QG(ON) VGE(TH) Gate Charge Gate to Emitter Threshold Voltage IC = 10A, VCE = 12V, VGE = 5V, See Fig. 14 IC = 1.0mA, VCE = VGE, See Fig. 10 IC = 10A, VCE = 12V TC = 25C TC = 150C 1.3 0.75 15.1 3.1 2.2 1.8 nC V V V
VGEP
Gate to Emitter Plateau Voltage
Switching Characteristics
td(ON)R triseR td(OFF)L tfL SCIS Current Turn-On Delay Time-Resistive Current Rise Time-Resistive Current Turn-Off Delay Time-Inductive Current Fall Time-Inductive Self Clamped Inductive Switching VCE = 14V, RL = 1, VGE = 5V, RG = 1K TJ = 25C VCE = 300V, L = 500Hy, VGE = 5V, RG = 1K TJ = 25C, See Fig. 12 TJ = 25C, L = 3.0mHy, RG = 1K, VGE = 5V, See Fig. 1 & 2 0.61 2.17 3.64 2.36 250 s s s s mJ
Thermal Characteristics
RJC Thermal Resistance Junction-Case TO-263 0.9 C/W
(c)2005 Fairchild Semiconductor Corporation ISL9V2540S3S Rev A.
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ISL9V2540S3S N-Channel Ignition IGBT
Typical Performance Curves
40 ISCIS, INDUCTIVE SWITCHING CURRENT (A) RG = 1K, VGE = 5V,Vdd = 14V 35 30 25 20 15 10 TJ = 150C 5 SCIS Curves valid for Vclamp Voltages of <430V 0 0 25 50 75 100 125 150 175 200 TJ = 25C ISCIS, INDUCTIVE SWITCHING CURRENT (A) 40 RG = 1K, VGE = 5V,Vdd = 14V 35 30 25 20 TJ = 25C 15 10 TJ = 150C 5 SCIS Curves valid for Vclamp Voltages of <430V 0 0 1 2 3 4 5 6 7 L, INDUCTANCE (mHy) 8 9 10
tCLP, TIME IN CLAMP (S)
Figure 1. Self Clamped Inductive Switching Current vs Time in Clamp
1.55 VCE, COLLECTOR TO EMITTER VOLTAGE (V) ICE = 6A 1.50
Figure 2. Self Clamped Inductive Switching Current vs Inductance
2.2 VCE, COLLECTOR TO EMITTER VOLTAGE (V) ICE = 10A 2.1 2.0 1.9 1.8 1.7 VGE = 4.5V 1.6 1.5 VGE = 10.0V 1.4 -50 -25 0 25 50 75 100 125 150 175 VGE = 5.0V VGE = 4.0V VGE = 3.5V
VGE = 3.5V
1.45
VGE = 4.0V
VGE = 4.5V
1.40
1.35 VGE = 5.0V VGE = 10.0V 1.25 -50 -25 0 25 50 75 100 125 150 175
1.30
TJ, JUNCTION TEMPERATURE (C)
TJ, JUNCTION TEMPERATURE (C)
Figure 3. Collector to Emitter On-State Voltage vs Junction Temperature
Figure 4. Collector to Emitter On-State Voltage vs Junction Temperature
20
20 ICE, COLLECTOR TO EMITTER CURRENT (A) VGE = 5.0V 15 VGE = 4.5V VGE = 4.0V VGE = 3.5V 10 VGE = 3.0V ICE, COLLECTOR TO EMITTER CURRENT (A) VGE = 10.0V
VGE = 10.0V VGE = 5.0V 15 VGE = 4.5V VGE = 4.0V VGE = 3.5V 10 VGE = 3.0V
5
5
TJ = - 40C 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
TJ = 25C 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector to Emitter On-State Voltage vs Collector Current
(c)2005 Fairchild Semiconductor Corporation ISL9V2540S3S Rev A.
Figure 6. Collector to Emitter On-State Voltage vs Collector Current
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ISL9V2540S3S N-Channel Ignition IGBT
Typical Performance Curves (Continued)
20 ICE, COLLECTOR TO EMITTER CURRENT (A) VGE = 10.0V VGE = 5.0V 15 VGE = 4.5V VGE = 4.0V 10 VGE = 3.5V VGE = 3.0V ICE, COLLECTOR TO EMITTER CURRENT (A) 20 DUTY CYCLE < 0.5%, VCE = 5V PULSE DURATION = 250s 15
TJ = 175C 10
5
5
TJ = 25C
TJ = 175C 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
TJ = -40C 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 7. Collector to Emitter On-State Voltage vs Collector Current
16 14 ICE, DC COLLECTOR CURRENT (A) 12 10 8 6 4 2 0 25 1.0 -50 VGE = 4.0V VTH, THRESHOLD VOLTAGE (V) 1.8 2.0
Figure 8. Transfer Characteristics
VCE = VGE ICE = 1mA
1.6
1.4
1.2
50
75
100
125
150
175
-25
0
25
50
75
100
125
150
175
TC, CASE TEMPERATURE (C)
TJ JUNCTION TEMPERATURE (C)
Figure 9. DC Collector Current vs Case Temperature
Figure 10. Threshold Voltage vs Junction Temperature
10 Inductive tOFF ICE = 6.5A, VGE = 5V, RG = 1K
10000 VECS = 24V 1000 LEAKAGE CURRENT (A) SWITCHING TIME (S)
9 8 7 6 5 4 3 Resistive tOFF
100
10 VCES = 300V 1 VCES = 250V 0.1 -50 -25 0 25 50 75 100 125 150 175
Resistive tON 2 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (C)
TJ, JUNCTION TEMPERATURE (C)
Figure 11. Leakage Current vs Junction Temperature
Figure 12. Switching Time vs Junction Temperature
(c)2005 Fairchild Semiconductor Corporation ISL9V2540S3S Rev A.
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ISL9V2540S3S N-Channel Ignition IGBT
Typical Performance Curves (Continued)
1500 FREQUENCY = 1 MHz 1250 C, CAPACITANCE (pF) VGE, GATE TO EMITTER VOLTAGE (V) 8 10 IG(REF) = 1mA, RL = 1.25, TJ = 25C
1000
CIES
6
VCE = 12V
750
4
500 CRES 250 COES
2 VCE = 6V 0 0 5 10 15 20 25 QG, GATE CHARGE (nC) 30 35 40
0 0
5
10
15
20
25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 13. Capacitance vs Collector to Emitter Voltage
445 BVCER, BREAKDOWN VOLTAGE (V) 440 435 430 425 420 415 410 405 10 TJ = 175C TJ = 25C
Figure 14. Gate Charge
TJ = - 40C
100 RG, SERIES GATE RESISTANCE ()
1000
5000
Figure 15. Breakdown Voltage vs Series Gate Resistance
ZJC, NORMALIZED THERMAL RESPONSE
100 0.5
0.2 0.1 10-1 0.05 0.02
t1 PD t2
0.01
10-2 10-5
SINGLE PULSE 10-4 10-3 T1, RECTANGULAR PULSE DURATION (s)
DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC
10-2 10-1
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
(c)2005 Fairchild Semiconductor Corporation ISL9V2540S3S Rev A.
www.fairchildsemi.com
ISL9V2540S3S N-Channel Ignition IGBT
Test Circuit and Waveforms
L VCE R or L C RG = 1K 5V E E G + LOAD
C RG DUT G
PULSE GEN
DUT
VCE
Figure 17. Inductive Switching Test Circuit
Figure 18. tON and tOFF Switching Test Circuit
VCE tP L IAS VARY tP TO OBTAIN REQUIRED PEAK IAS VGE DUT tP 0V RG -
BVCES
VCE VDD
+
VDD
IAS 0.01
0 tAV
Figure 19. Unclamped Energy Test Circuit
Figure 20. Unclamped Energy Waveforms
(c)2005 Fairchild Semiconductor Corporation ISL9V2540S3S Rev A.
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ISL9V2540S3S N-Channel Ignition IGBT
SPICE Thermal Model
REV 16 May 2005 ISL9V2540S3S CTHERM1 th 6 19e -4 CTHERM2 6 5 12e -3 CTHERM3 5 4 15e -3 CTHERM4 4 3 25e -3
RTHERM1
th
JUNCTION
CTHERM1
6
CTHERM5 3 2 69e -3 CTHERM6 2 tl 100e -3
RTHERM2 CTHERM2
RTHERM1 th 6 80e -3 RTHERM2 6 5 81e -3 RTHERM3 5 4 82e -3 RTHERM4 4 3 100e -3 RTHERM5 3 2 150e -3 RTHERM6 2 tl 1645e -4
4 RTHERM3 CTHERM3 5
SABER Thermal Model
ISL9V2540S3S template thermal_model th tl thermal_c th, tl { ctherm.ctherm1 th 6 = 19e -4 ctherm.ctherm2 6 5 = 12e -3 ctherm.ctherm3 5 4 = 15e -3
2 RTHERM5 CTHERM5 3 RTHERM4 CTHERM4
ctherm.ctherm4 4 3 = 25e -3 ctherm.ctherm5 3 2 = 69e -3
RTHERM6 CTHERM6
ctherm.ctherm6 2 tl = 100e -3
rtherm.rtherm1 th 6 = 80e -3 rtherm.rtherm2 6 5 = 81e -3 rtherm.rtherm3 5 4 = 82e -3 rtherm.rtherm4 4 3 = 100e -3 rtherm.rtherm5 3 2 = 150e -3 rtherm.rtherm6 2 tl = 1645e -4 }
tl CASE
(c)2005 Fairchild Semiconductor Corporation ISL9V2540S3S Rev A.
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TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM FAST(R) ActiveArrayTM FASTrTM BottomlessTM FPSTM Build it NowTM FRFETTM CoolFETTM GlobalOptoisolatorTM CROSSVOLTTM GTOTM DOMETM HiSeCTM EcoSPARKTM I2CTM E2CMOSTM i-LoTM EnSignaTM ImpliedDisconnectTM FACTTM IntelliMAXTM FACT Quiet SeriesTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM
DISCLAIMER
ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I16

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